2SD2150 - Transistor

Datasheet Details

1) Low VCE(sat). VCE(sat) = 0.2V(Typ. ) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power dissipation PC 0.5 2 Junction temperature Tj 150 Storage temperature Tstg ∗1 Single pulse Pw=1.

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Published: Apr 3, 2005 |