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2SD2150 - Transistor

Features

  • 1) Low VCE(sat). VCE(sat) = 0.2V(Typ. ) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power dissipation PC 0.5 2 Junction temperature Tj 150 Storage temperature Tstg ∗1 Single pulse Pw=1.

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Datasheet Details

Part number 2SD2150
Manufacturer ROHM
File Size 103.50 KB
Description Transistor
Datasheet download datasheet 2SD2150 Datasheet

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Full PDF Text Transcription

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Low Frequency Transistor (20V, 3A) 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zStructure Epitaxial planar type NPN silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO 40 Collector-emitter voltage VCEO 20 Emitter-base voltage VEBO 6 Collector current 3 IC 5 Collector power dissipation PC 0.5 2 Junction temperature Tj 150 Storage temperature Tstg ∗1 Single pulse Pw=10ms ∗2 Mounted on a 40×40×0.7mm Ceramic substrate. −55 to +150 Unit V V V A (DC) A (Pulse) ∗1 W W ∗2 °C °C zDimensions(Unit : mm) 2SD2150 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..21 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.
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