2SB1708 - Transistors

Datasheet Details

1) A collector current is large. (3A) 2) VCE(sat) ≤.
250mV At IC =.
1.5A / IB =.
30mA (2) 2.9 1.0MAX 0.85 0.16 0.3 0.6 0 0.1 Each lead has same dimensions 0.7 Abbreviated symbol : YY ROHM : TSMT3 (1) Base (2) Emitter (3) Collector !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage tempera.

📁 2SB1708 Similar Datasheet

2SB170 - Ge PNP Alloy Junction Transistor (ETC)
2SB1700 - PNP/NPN Epitaxial Planar Silicon Darlington Transistors (Sanyo Semicon Device)
2SB171 - Ge PNP Alloy Junction Transistor (ETC)
2SB172 - Ge PNP Alloy Junction Transistor (ETC)
2SB1721 - Silicon Power Transistors (NEC)
2SB173 - Ge PNP Alloy Junction Transistor (ETC)
2SB1734 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
2SB1739 - / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by Rohm

Published: Mar 22, 2005 |