2SB1474 - Power Transistor

Datasheet Details

1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits -80 -80 -7 -4 -6 1 10 150 -55~+150 Unit V V V A(DC) A W W.

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Published: Mar 22, 2005 |