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UPA2600T1R - N-CHANNEL MOSFET

Description

The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application.

Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet μPA2600T1R N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Features • High Drain to Source Voltage ⎯ VDSS = 20 V (VGS = 0 V, TA = 25°C) • 2.5V drive available • Low on-state resistance ⎯ RDS (on)1 = 13.8 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) ⎯ RDS (on)2 = 19.1 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) • Built-in gate protection diode • Lead-free and Halogen-free 6pinHUSON2020 Ordering Information Part Number Package 6pinHUSON2020 Note: ∗1.
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