RQJ0603LGDQA - Silicon P Channel MOS FET Power Switching

Renesas

RQJ0603LGDQA Datasheet Preview — Preview of RQJ0603LGDQA PDF

Datasheet Details

Part number	RQJ0603LGDQA
Manufacturer	Renesas ↗
File Size	125.25 KB
Description	Silicon P Channel MOS FET Power Switching
Datasheet	RQJ0603LGDQA-Renesas.pdf

RQJ0603LGDQA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 158 mΩ typ (VGS =.
10 V, ID =.
0.9 A).
Low drive current.
High speed switching.
4.5 V gate drive Outline.

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Published: May 5, 2015 |