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RQJ0301HGDQS - Silicon P-Channel MOS FET

Renesas

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Datasheet Details

Part number	RQJ0301HGDQS
Manufacturer	Renesas ↗
File Size	76.48 KB
Description	Silicon P-Channel MOS FET
Datasheet	RQJ0301HGDQS-Renesas.pdf

RQJ0301HGDQS Product details

Features

Low on-resistance RDS(on) = 38 m Ω typ (VGS =.
10 V, ID =.
2.6 A).
Low drive current.
High speed switching.
4.5 V gate drive Outline.

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Published: May 14, 2016 |