RQJ0301HGDQS Silicon P-Channel MOS FET

Renesas

Description

RQJ0301HGDQS Silicon P Channel MOS FET Power Switching .

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Datasheet Specifications

Part number: RQJ0301HGDQS
Manufacturer: Renesas ↗
File Size: 76.48 KB
Datasheet: RQJ0301HGDQS-Renesas.pdf
Description: Silicon P-Channel MOS FET

Features

* Low on-resistance RDS(on) = 38 m Ω typ (VGS =
* 10 V, ID =
* 2.6 A)
* Low drive current
* High speed switching
* 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “HG”. REJ03G1265-0300 Rev.3.0

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RQJ0301HGDQS Silicon P-Channel MOS FET Renesas

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