RMQS3A1818DGBA, RMQS3A1836DGBA Datasheet - Renesas

RMQS3A1818DGBA 18-Mbit QDR-II SRAM

The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. Al.

RMQS3A1818DGBA Features

* Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)

* Clock z z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight

RMQS3A1836DGBA-Renesas.pdf

RMQS3A1818DGBA Datasheet Preview — This datasheet PDF includes multiple part numbers: RMQS3A1818DGBA, RMQS3A1836DGBA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

RMQS3A1818DGBA, RMQS3A1836DGBA

Manufacturer:

Renesas ↗

File Size:

855.13 KB

Description:

18-mbit qdr-ii sram.

Note:

This datasheet PDF includes multiple part numbers: RMQS3A1818DGBA, RMQS3A1836DGBA.
Please refer to the document for exact specifications by model.

RMQS3A1818DGBA Distributor

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RMQS3A1818DGBA RMQS3A1836DGBA 18-Mbit QDR-II SRAM Renesas