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RJU4351TDPP-EJ Single Diode Ultra Fast Recovery Diode

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Description

Preliminary Datasheet RJU4351TDPP-EJ Single Diode Ultra Fast Recovery Diode .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = 100 A/s) Low forward voltage: VF = 1.6 V typ. (at IF = 10 A) Low reverse current: IR = 1 A max. (at VR = 430 V) Isolated package: TO-220FP (2pin) R07DS0634EJ0100 Rev.1.00 Jan 05, 2012 Outline RENESAS

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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