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RJK4513DPE N-Channel Power MOSFET

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Description

RJK4513DPE Silicon N Channel MOS FET High Speed Power Switching .

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Features

* Low on-resistance RDS(on) = 0.33 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching REJ03G1586-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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