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RJK1212DPA N-Channel Power MOSFET

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Description

Preliminary Datasheet RJK1212DPA Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* R07DS0091EJ0100 Rev.1.00 Jun 18, 2011 Outline RENESAS Package code: PWSN0008DC-A (Package n

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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