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RJF0604DPD Silicon N-Channel FET

RJF0604DPD Description

Target Specifications Datasheet RJF0604DPD Silicon N Channel MOS FET Series Power Switching R07DS0713EJ0100 Rev.1.00 Apr 17, 2012 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

RJF0604DPD Features

* Logic level operation (4 V Gate drive).
* Built-in the over temperature shut-down circuit.
* High endurance capability against to the short circuit.
* Latch type shut down operation (need 0 voltage recovery).
* Built-in the current limitation circuit.
* Power supply voltage

RJF0604DPD Applications

* Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 1 2 3 G Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit D 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings Item Symbol Drain to source voltage

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