PS2535-1 Datasheet (Renesas) - NPN silicon Darlington-connected phototransistor

PS2535-1, NPN silicon Darlington-connected phototransistor

The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor.

High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor, and Darlington transistor output ena

PS2535-1 Features

* High collector to emitter voltage (VCEO = 350 V)

* High isolation voltage (BV = 5 000 Vr.m.s.)

* High current transfer ratio (CTR = 1 500 % TYP.)

* Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel

* Pb-free product

* Safety standards

* UL