NP40N055ELE - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

Part number	NP40N055ELE
Manufacturer	Renesas
File Size	326.19 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP40N055ELE Datasheet
Additional preview pages of the NP40N055ELE datasheet.

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A) RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A).
Low input capacitance Ciss = 1300 pF TYP.
Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all produ.

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Published: Aug 18, 2015 |