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NP100N04NUJ - MOS FIELD EFFECT TRANSISTOR

Renesas

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Datasheet Details

Part number	NP100N04NUJ
Manufacturer	Renesas
File Size	211.19 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP100N04NUJ-Renesas.pdf

NP100N04NUJ Product details

Description

The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A).
Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V).
High current rating: ID(DC) = ±100 A.
Designed for automotive.

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Published: May 15, 2016 |