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NE5550979A Silicon Power LDMOS FET

NE5550979A Description

Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 .

NE5550979A Features

* High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA,

NE5550979A Applications

* 150 MHz Band Radio System
* 460 MHz Band Radio System
* 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550979A Order Number NE5550979A-A Package 79A (Pb Free) Marking W6 Supplying Form
* 12 mm wide embossed taping
* Gate pin faces the pe

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