NE5550979A Silicon Power LDMOS FET

Renesas

Description

Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 .

📥 Download Datasheet

NE5550979A Datasheet Preview — Preview of NE5550979A PDF

Datasheet Specifications

Part number: NE5550979A
Manufacturer: Renesas ↗
File Size: 802.93 KB
Datasheet: NE5550979A_Renesas.pdf
Description: Silicon Power LDMOS FET

Features

* High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA,

Applications

* 150 MHz Band Radio System
* 460 MHz Band Radio System
* 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550979A Order Number NE5550979A-A Package 79A (Pb Free) Marking W6 Supplying Form
* 12 mm wide embossed taping
* Gate pin faces the pe

NE5550979A Distributors

📁 Related Datasheet

NE555 NE5551 NE5552 NE5553 NE5554 NE5555

📌 All Tags

NE5550979A Silicon Power LDMOS FET Renesas

Renesas NE5550979A-like datasheet