N6006NZ N-channel MOSFET

Renesas

Description

Data Sheet N6006NZ N-channel MOSFET 600V, 6A, 1.2Ω R07DS1020EC0100 Rev.1.00 Feb 18, 2013 .
The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance RDS.

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Datasheet Specifications

Part number: N6006NZ
Manufacturer: Renesas ↗
File Size: 254.57 KB
Datasheet: N6006NZ-Renesas.pdf
Description: N-channel MOSFET

Features

* Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A)
* Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)
* High current ID(DC) = ±6.0 A
* RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating Pure Sn (Tin) Tub

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N6006NZ N-channel MOSFET Renesas

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