M6MGT331S4BKT Datasheet - Renesas

M6MGT331S4BKT, CMOS SRAM

www.DataSheet4U.com Preliminary Notice: This is not a final specification.
Some parametric limits are subject to change.
Renesas LSIs M6MGB/T331S4B

Features

* 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6M

M6MGT331S4BKT_Renesas.pdf