K3510 N-Channel Power MOSFET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET .
The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number: K3510
Manufacturer: Renesas ↗
File Size: 149.62 KB
Datasheet: K3510-Renesas.pdf
Description: N-Channel Power MOSFET

Features

* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 8500 pF TYP.
* Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOL

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K3510 N-Channel Power MOSFET Renesas

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