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2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1 2 3
G
REJ03G0929-0200 (Previous: ADE-208-1268)
Rev.2.00 Sep 07, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1317
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
K1317 Datasheet
