C2570A NPN EPITAXIAL SILICON RF TRANSISTOR

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Description

DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION .
The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. Low noise and high gain : NF = 1.

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Datasheet Specifications

Part number: C2570A
Manufacturer: Renesas ↗
File Size: 179.97 KB
Datasheet: C2570A-Renesas.pdf
Description: NPN EPITAXIAL SILICON RF TRANSISTOR

Features

* Low noise and high gain : NF = 1.5 dB TYP. , Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz
* Wide dynamic range : NF = 1.9 dB TYP. , Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity 500 pcs (Non reel) 2.5 kpcs/box

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C2570A NPN EPITAXIAL SILICON TRANSISTOR Renesas

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