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2SK3435-Z - N-CHANNEL POWER MOSFET

Download the 2SK3435-Z datasheet PDF. This datasheet also covers the 2SK3435 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A).
  • Low Ciss: Ciss = 3200 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3435-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK3435-Z
Manufacturer Renesas
File Size 129.81 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3435-Z Datasheet

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Other Datasheets by Renesas

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z TO-263 TO-220SMD Note Note TO-220SMD package is produced only in Japan.
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