2SK2554 - Silicon N Channel MOS FET

Renesas

Datasheet Details

Low on-resistance.
RDS(on) = 4.5 mΩ typ.
High speed switching.
4 V gate drive device can be driven from 5 V source Outline REJ03G1016-0600 (Previous: ADE-208-359D) Rev.6.00 Sep 07, 2005.

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Published: Jul 14, 2016 |