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2SK1482 - N-Channel MOSFET

Description

The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Features

  • Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A).
  • Voltage drive at logic level (VGS = 4 V) is possible.
  • Bidirectional zener diode for protection is incorporated in between the gate and the source.
  • Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.
  • Can be used complementary with the 2SJ196.

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Datasheet Details

Part number 2SK1482
Manufacturer Renesas
File Size 131.65 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK1482 Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays. FEATURES • Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Voltage drive at logic level (VGS = 4 V) is possible. • Bidirectional zener diode for protection is incorporated in between the gate and the source.
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