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2SC5750 - NPN SILICON RF TRANSISTOR

Renesas

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Datasheet Details

Part number	2SC5750
Manufacturer	Renesas
File Size	131.09 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5750-Renesas.pdf

2SC5750 Product details

Features

Ideal for medium output power amplification.
PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm.
HFT3 technology (fT = 12 GHz) adopted.
High reliability through use of gold electrodes.
4-pin super minimold package.

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Published: Apr 9, 2016 |