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2SC5508 - NPN SILICON RF TRANSISTOR

Description

Summary First edition issued Renesas format is applied to this data sheet.

ORDERING INFORMATION is modified.

Up to date S-PARAMETERS.

Features

  • Ideal for low-noise, high-gain amplification.

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Full PDF Text Transcription

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Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FEATURES • • • • • Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP.
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