2SC3357 - NPN EPITAXIAL SILICON RF TRANSISTOR

Renesas

The 2SC3357 by Renesas is a NPN EPITAXIAL SILICON RF TRANSISTOR. Below is the official datasheet preview.

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2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR by Renesas - Datasheet Preview — Official preview page of the **2SC3357** NPN EPITAXIAL SILICON RF TRANSISTOR datasheet (Renesas).

Datasheet Details

Part number	2SC3357
Manufacturer	Renesas
File Size	235.12 KB
Description	NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet	2SC3357_Renesas.pdf
Additional preview pages of the 2SC3357 datasheet.

2SC3357 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate).
Small package : 3-pin power minimold package.

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Published: Oct 29, 2013 |