Datasheet4U Logo Datasheet4U.com

TBB1012 - Twin Built in Biasing Circuit MOS FET IC

Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction. Suitable for World Standard Tuner RF amplifier. High gain Low noise Low output capacitance Power supply voltage: 5 V Outline.

📥 Download Datasheet

Datasheet preview – TBB1012

Datasheet Details

Part number TBB1012
Manufacturer Renesas Electronics
File Size 182.59 KB
Description Twin Built in Biasing Circuit MOS FET IC
Datasheet download datasheet TBB1012 Datasheet
Additional preview pages of the TBB1012 datasheet.
Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
TBB1012 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G1245-0200 Rev.2.00 Aug 22, 2006 Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Very useful for total tuner cost reduction. Suitable for World Standard Tuner RF amplifier. High gain Low noise Low output capacitance Power supply voltage: 5 V Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. Marking is “MM“. 2. TBB1012 is individual type number of Renesas TWIN BBFET.
Published: |