RQA0001DNS - Silicon N-Channel MOS FET

Renesas Technology

Datasheet Details

Part number	RQA0001DNS
Manufacturer	Renesas Technology
File Size	283.75 KB
Description	Silicon N-Channel MOS FET
Datasheet	RQA0001DNS_RenesasTechnology.pdf

High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz).
Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8mm) Outline.

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Published: Aug 20, 2009 |