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RJM0306JSP Silicon N / P Channel Power MOS FET

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Description

www.DataSheet.co.kr Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching .

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Features

* Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating REJ03G1571-0101 Rev.1.01 May 28, 2010 Outline RENESAS Packag

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