RJM0306JSP - Silicon N / P Channel Power MOS FET

Renesas Technology

Datasheet Details

Part number	RJM0306JSP
Manufacturer	Renesas Technology
File Size	189.12 KB
Description	Silicon N / P Channel Power MOS FET
Datasheet	RJM0306JSP_RenesasTechnology.pdf

Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating REJ03G1571-0101 Rev.1.01 May 28, 2010 Outline.

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Published: Dec 7, 2011 |