RJK0652DPB - Silicon N Channel Power MOS FET

Renesas Technology

The RJK0652DPB by Renesas Technology is a Silicon N Channel Power MOS FET. Below is the official datasheet preview.

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RJK0652DPB Silicon N Channel Power MOS FET by Renesas Technology - Datasheet Preview — Official preview page of the **RJK0652DPB** Silicon N Channel Power MOS FET datasheet (Renesas Technology).

Datasheet Details

Part number	RJK0652DPB
Manufacturer	Renesas Technology
File Size	100.64 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0652DPB-RenesasTechnology.pdf
Additional preview pages of the RJK0652DPB datasheet.

RJK0652DPB Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V).
Pb-free.
Halogen-free Outline.

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Published: Aug 17, 2015 |