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HN29V1G91T-30 128M X 8-bit AG-AND Flash Memory

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Description

HN29V1G91T-30 128M × 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev.4.00 Jul.20.2004 .
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.

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Features

* On-board single power supply: VCC = 2.7 V to 3.6 V
* Operation Temperature range: Ta = 0 to +70°C
* Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page Register: (2048+64) bytes

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