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RM5N60S4 - N-Channel Enhancement Mode Power MOSFET

Description

design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

Features

  • ƽ VDS =60V,ID =5A RDS(ON) < 55mȍ @ VGS=10V˄Typ: 46mȍ˅ RDS(ON) < 80mȍ @ VGS=4.5V˄Typ: 60mȍ˅ S Schematic diagram.

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Datasheet Details

Part number RM5N60S4
Manufacturer Rectron
File Size 341.70 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM5N60S4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM5N60S4 N-Channel Enhancement Mode Power MOSFET Description The RM5N60S4 uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features ƽ VDS =60V,ID =5A RDS(ON) < 55mȍ @ VGS=10V˄Typ: 46mȍ˅ RDS(ON) < 80mȍ @ VGS=4.5V˄Typ: 60mȍ˅ S Schematic diagram Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply Halogen-free P/N suffix V means AEC-Q101 qualified, e.
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