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WM71008 - (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory

Download the WM71008 datasheet PDF. This datasheet also covers the WM71004 variant, as both devices belong to the same (wm71004 - wm71016) 4/8/16kbit secure f-ram memory family and are provided as variant models within a single manufacturer datasheet.

Description

The WM710xx is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM.

Features

  • 4/8/16 Kbit Ferroelectric Nonvolatile RAM.
  • Organized as 256/512/1024 x 16 bits.
  • Very High Read/Write Endurance (> 1014).
  • 20-Year Data Retention.
  • Gamma Stability Demonstrated to > 30 kGy.
  • Symmetric Read/Write Operation.
  • Advanced High-Reliability Ferroelectric Process Interface and Security Features.
  • EPC Class 1 Gen2 (ISO18000-6C) RFID Compatible Interface (revision 1.2.0).
  • 192-Bit Memory: 96-Bit Electronic Product Code™ (EPC), 32-Bit Access Password, 32-Bit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (WM71004_Ramtron.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number WM71008
Manufacturer Ramtron
File Size 463.18 KB
Description (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
Datasheet download datasheet WM71008 Datasheet

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Other Datasheets by Ramtron

Part Number Description
WM71004 (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
WM71016 (WM71004 - WM71016) 4/8/16Kbit Secure F-RAM Memory
WM72016 16Kbit Secure F-RAM Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr Preliminary WM71004 / WM71008 / WM71016 4/8/16Kbit Secure F-RAM Memory with Gen-2 RFID Access DESCRIPTION The WM710xx is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 20 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM‟s, the WM710xx write operations are zero power – there is no power or speed premium paid for executing writes into the WM710xx as compared to read power and speed. Operation of the memory is fully symmetric: it has an equivalent read and write range.
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