F8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET

Description

8NE60/F8NE60/I8NE60/E8NE60/B8NE60/D8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance.

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Datasheet Specifications

Part number: F8NE60
Manufacturer: ROUM
File Size: 1.34 MB
Datasheet: F8NE60-ROUM.pdf
Description: 7.5A 600V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.3Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Typical:5.5pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* Used in various power switching circuit for system miniaturization and higher efficiency.
* Power switch circuit of adaptor and charger. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Sym

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F8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET ROUM

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