Datasheet Details
| Part number | E8N25 |
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| Manufacturer | ROUM |
| File Size | 1.42 MB |
| Description | 8A 250V N-channel Enhancement Mode Power MOSFET |
| Datasheet |
 E8N25 Datasheet
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Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
Features
- Fast Switching.
- Low ON Resistance(Rdson≤0.47Ω).
- Low Gate Charge(Typical Data:12nC).
- Low Reverse Transfer Capacitances(Typical:7pF).
- 100% Single Pulse Avalanche Energy Test.
- 100% ΔVDS Test TO-220C TO-220F TO-262 3.