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EMB6 / UMB6N
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Outline
Parameter
Tr1 and Tr2
EMT6
UMT6
VCC IC(MAX.)
R1 R2
50V 100mA
47k 47k
(6)
(5)
(1)
(4)
(2)
(3)
EMB6 (SC-107C)
(6) (5)
for(4)
(1) (2) (3)
UMB6N SOT-363 (SC-88)
Features 1) Built-In Biasing Resistors, R1 = R2 = 47k.
d 2) Two DTA144E chips in one package.
3) Built-in bias resistors enable the configuration of
e an inverter circuit without connecting external d input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
n s with complete isolation to allow negative biasing e n of the input. They also have the advantage of
completely eliminating parasitic effects.
UMB6N Datasheet
