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SCS215AJ - SiC Schottky Barrier Diode

Features

  • 1) Shorter recovery time 650V 15A 23nC LPT(L) (1) (2) (3) (4) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward curre.

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Datasheet Details

Part number SCS215AJ
Manufacturer ROHM
File Size 453.98 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS215AJ Datasheet

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Full PDF Text Transcription

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SCS215AJ SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC LPT(L) (1) (2) (3) (4) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Embossed tape Reel size (mm) Tape width (mm) 330 24 1,000 TLL SCS215AJ Unit V V A A A A A W °C °C 200* 43* 4 Repetitive peak fo
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