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SCS110KE2 - SiC Schottky Barrier Diode

Features

  • 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 3.00 2.40 (1) (2) (3) 20.18.
  • Construction Silicon carbide epitaxial planer type 1.20 2.03 5.45 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode (3) Anode.
  • Absolute maximum ratings (Tj=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Symbol VRM VR Limits 1200 1200 Unit V V Continuous forward forward current.
  • 6 IF 5 / 10.
  • 1 A Surge no repetiti.

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Datasheet Details

Part number SCS110KE2
Manufacturer ROHM
File Size 495.61 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS110KE2 Datasheet

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Full PDF Text Transcription

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SiC Schottky Barrier Diode SCS110KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Case 5.62 6.17 3.61 3.81 20.95 Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 3.00 2.40 (1) (2) (3) 20.18 Construction Silicon carbide epitaxial planer type 1.20 2.03 5.45 0.
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