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Fast recovery diodes
RF1001T2D
Applications General rectification
Features 1) Cathode common type.
(TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
Construction Silicon epitaxial planar
Dimensions (Unit : mm)
10.0±0.3 0.1
4.5±0.3 0.1
2.8±0.2 0.1
15.0±0.4 0.2
8.0
8.0±0.2 12.0±0.2
5.0±0.2 13.5MIN
1.2
1.3 0.8
(1) (2) (3)
0.7±0.1 0.05
ROHM : TO220FN Manufacture Date
2.6±0.5
Datasheet
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM VR Io
200 200 10
Forward current surge peak (60Hz/1cyc) Junction temperature
IFSM Tj
80 150
Storage temoerature
Tstg 55 to 150
(*1)Business frequencies, Rating of R-load, Tc=126 C.
RF1001T2D Datasheet
