RB228T-30NZ - Schottky Barrier Diode

ROHM

Features

1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet.
Structure (1) (2) (3) Anode Cathode Anode.
Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date.
Package Dimensions (Unit : mm) 7 540 34.5.
Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Ope.

RB228T-30NZ schottky barrier diode by ROHM - Datasheet Preview

Datasheet Details

Part number	RB228T-30NZ
Manufacturer	ROHM
File Size	1.14 MB
Description	Schottky Barrier Diode
Datasheet	RB228T-30NZ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
RB226	(RB Series) Capacitor	Shanghai LUNSURE Electronic Technology
RB200	2.0A BRIDGE RECTIFIER	WON-TOP
RB201	2.0A BRIDGE RECTIFIER	WON-TOP
RB201	2.0/3.0A RB SERIES SIP BRIDGE RECTIFIERS	LRC
RB2010	2.0A BRIDGE RECTIFIER	WON-TOP

Other Datasheets by ROHM

Part Number	Description
RB228T-40NZ	Schottky Barrier Diode
RB228T-60NZ	Schottky Barrier Diode
RB228T100	Schottky Barrier Diode
RB228T100FH	Schottky Barrier Diode
RB228T100NZ	Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Schottky Barrier Diode RB228T-30NZ Application Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=100ºC Max.