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2SA1577FRA - Medium Power Transistor

Features

  • 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SSCC44009977F. RA.
  • Structure Epitaxial planer type PNP silicon transistor.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature ∗PC MAX. must not be exceeded. Tstg Limits.
  • 40.
  • 32.

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Datasheet Details

Part number 2SA1577FRA
Manufacturer ROHM
File Size 1.18 MB
Description Medium Power Transistor
Datasheet download datasheet 2SA1577FRA Datasheet

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Full PDF Text Transcription

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Medium Power Transistor (-32V, -05A) AEC-Q101 Qualified 2SA1577FRA Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SSCC44009977F.RA Structure Epitaxial planer type PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature ∗PC MAX. must not be exceeded. Tstg Limits −40 −32 −5 −0.5 0.2 150 −55 to +150 Unit V V V A∗ W °C °C Dimensions (Unit : mm) 22SSAA11557777FRA 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.9±0.1 0.2 0.7±0.1 1.25±0.1 2.1±0.1 0.1 (3) 0.3 +−00.1 All terminals have same dimensions 0∼0.1 0.15±0.
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