Datasheet4U Logo Datasheet4U.com

SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER

SPB2026Z Description

SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW DESIGNS.
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic en.

SPB2026Z Features

* an input power detector, on/off power control, ESD protection, excellent over- Optimum Technology Matching® Applied all robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. GaAs HBT GaAs MESFET p Vcc = 5V
* InGaP HBT SiGe BiCM

SPB2026Z Applications

* Macro/Micro-Cell Driver Stage
* Pico-Cell Output Stage
* GSM, CDMA, TDSCDMA, WCDMA
* Single and Multi-Carrier Appli- cations Parameter Small Signal Gain Output Power at 1dB Compression Third Order Supression WCDMA Channel Power WCDMA Channel Power Min. 12.2 12.1 31.3 -42.0 Speci

📥 Download Datasheet

Preview of SPB2026Z PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
SPB2026Z
Manufacturer
RFMD
File Size
460.56 KB
Datasheet
SPB2026Z-RFMD.pdf
Description
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER

📁 Related Datasheet

  • SPB200UFA - (SPBxx0UFA) Single Phase Bridge (VMI)
  • SPB200UFB - (SPBxx0UFB) Single Phase Bridge (VMI)
  • SPB20N60C2 - Cool MOS Power Transistor (Infineon Technologies)
  • SPB20N60C3 - Cool MOS& Power Transistor (Infineon Technologies)
  • SPB20N60S5 - Cool MOS Power Transistor (Infineon Technologies)
  • SPB21N10 - SIPMOS Power-Transistor (Infineon Technologies)
  • SPB21N50C3 - Power Transistor (Infineon Technologies)
  • SPB-002 - 10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY (SSDI)

📌 All Tags

RFMD SPB2026Z-like datasheet