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RTH23007-10 - GaN Doherty Hybrid Amplifier

RTH23007-10 Description

GaN Doherty Hybrid Amplifier RTH23007-10 Product .
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride.

RTH23007-10 Features

* GaN on SiC Chip on Board
* Surface Mount Hybrid Type
* Asymmetric Doherty Amplifier
* High Efficiency

RTH23007-10 Applications

* RF Sub-Systems
* Base Station
* RRH
* 4G/ LTE system

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Datasheet Details

Part number
RTH23007-10
Manufacturer
RFHIC
File Size
285.60 KB
Datasheet
RTH23007-10-RFHIC.pdf
Description
GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier RFHIC
RFHIC RTH23007-10-like datasheet