SZM-2066Z - 2W POWER AMPLIFIER

RF Micro Devices

SZM-2066Z Datasheet Preview — Preview of SZM-2066Z PDF

Datasheet Details

Part number	SZM-2066Z
Manufacturer	RF Micro Devices
File Size	614.21 KB
Description	2W POWER AMPLIFIER
Datasheet	SZM-2066Z-RFMicroDevices.pdf

SZM-2066Z Product details

Description

RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4GHz to 2.7GHz bands.It can run from a 3V to 5V supply.The

Features

an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. GaAs MESFET.
InGaP HBT Vcc = 5V SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS RFIN RFOUT Si BJT GaN HEMT Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias InP HBT RF MEMS LDMOS Pow er Up/Dow n Control Pow er Detector Features.
P1dB=.

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Published: Apr 1, 2016 |