SXB4089Z MEDIUM POWER HBT AMPLIFIER

RF Micro Devices

Description

SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier SXB4089Z 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SO.
RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic p.

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Datasheet Specifications

Part number: SXB4089Z
Manufacturer: RF Micro Devices
File Size: 419.66 KB
Datasheet: SXB4089Z-RFMicroDevices.pdf
Description: MEDIUM POWER HBT AMPLIFIER

Features

* On-Chip Active Bias Control, Single 5V Supply
* High Output 3rd Order Intercept:
* +45dBm Typ.
* High P1dB: +28dBm Typ.
* High Gain: +20dB at 880MHz
* Low RTH: 25°C/W Typ.

Applications

* Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied
* GaAs HBT GaAs MESFET
* InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dBm Typical IP3, P1dB, Gain 50 45 OIP3

SXB4089Z Distributors

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SXB4089Z MEDIUM POWER HBT AMPLIFIER RF Micro Devices

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