RFAM3790 - EDGE QAM INTEGRATED AMPLIFIER

RF Micro Devices

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Datasheet Details

Part number: RFAM3790
Manufacturer: RF Micro Devices
File Size: 287.73 KB
Datasheet: RFAM3790-RFMicroDevices.pdf
Description: EDGE QAM INTEGRATED AMPLIFIER

RFAM3790 Product details

Description

optional to improve matching in application Capacitor, X7R, 50V, 10% optional to improve matching in application Resistor, TK200, 5% Impedance Bead, DCR 0.1Ohm, 800mA ESD Protection Zener Diode, 200mW Transient Suppressor Diode, 5% Transformer Transformer Transformer Amplifier Manufacturer Taiyo Yuden Triquint On Semiconductor Diotec RFMD RFMD RFMD RFMD Part Number BK 1608HS600-T TQP200002 MM3Z5V6T1G TGL34-33A RFXF0006 RFXF0008 RFXF0009 RFAM3790 RF Micro Devices Inc.7628 Thorndike Road, Gree

Features

Excellent Linearity.
Extremely High Output Capability.
Voltage Controlled Attenuator.
Power Enable Featrure.
Extremely Low Distortion.
Optimal Reliability.
Low Noise.
Unconditionally Stable Under all Terminations.
27.5 dB Typical Gain at 1218MHz.
410mA Typical at 12VDC.

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EDGE QAM INTEGRATED AMPLIFIER RF Micro Devices

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