RF3932 60W GaN Wideband Power Amplifier

RF Micro Devices

Description

RF3932 60W GaN Wideband Power Amplifier The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellul.
Pin 1 2 3 Name GATE DRAIN SO.

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Datasheet Specifications

Part number: RF3932
Manufacturer: RF Micro Devices
File Size: 1.31 MB
Datasheet: RF3932-RFMicroDevices.pdf
Description: 60W GaN Wideband Power Amplifier

Features

* Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical Performance

Applications

* Using an advanced high power density gallium nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic pack

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RF3932 60W GaN Wideband Power Amplifier RF Micro Devices

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