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QPA1111 - 30 Watt GaN Power Amplifier

Datasheet Summary

Description

Data Sheet Rev.

A, February 2024 | Subject to change without notice 1 of 28 © 2024 Qorvo US, Inc.

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Features

  • Frequency Range: 8.5.
  • 10.5 GHz.
  • POUT (PIN = 18 dBm): 45 dBm.
  • PAE (PIN = 18 dBm): 45 %.
  • Power Gain (PIN = 18 dBm): 27 dBm.
  • Small Signal Gain: 38 dB.
  • Bias: Pulsed VD = 22 V, IDQ = 620 mA, PW = 100 µs, DC = 10%, VG = -2.3 V typ. range.
  • Package Dimensions: 6.0 x 6.0 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Appl.

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Datasheet Details

Part number QPA1111
Manufacturer Qorvo
File Size 1.57 MB
Description 30 Watt GaN Power Amplifier
Datasheet download datasheet QPA1111 Datasheet
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Full PDF Text Transcription

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QPA1111 8.5 – 10.5 GHz 30 Watt GaN Power Amplifier Product Overview Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal gain of 38 dB. To simplify system integration, the QPA1111 is fully matched to 50 ohms with DC grounded I/O ports for optimum ESD performance. Also, there are on-chip blocking capacitors following the DC grounds on the input and output ports. The QPA1111 is ideal for supporting communications and radar applications in both commercial and military markets. The QPA1111 is 100% DC and RF tested to ensure compliance to electrical specifications.
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