QL85H6S-B, QL85H6S-A Datasheet (QSI)

QL85H6S-B, QL85H6S-A, Laser Diode

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : www.DataSheet4U.com Model : QL85H6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL85H6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd.

Ver.3 APR.2005 www.DataSheet4U.com OVERVIEW QL85H6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure.

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QL85H6S-B Features

* - Visible Light Output - Optical Power Output - Package Type : : : λp = 850 nm 20mW CW TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View A B C Pin Configuration LD cathode, PD anode (Fig. 1) LD , PD anode (Fig. 2) LD anode, PD cathode (Fig