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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL85F6S-A/B/C
Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL85F6S-A/B/C
AlGaAs Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver.1 APR.2005
♦OVERVIEW
QL85F6SA is a MOCVD grown 850nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW for industrial optical module and sensor applications.
♦APPLICATION
- Sensor - Industrial Optical Module
♦FEATURES
- Visible Light Output : λp = 850 nm
- Optical Power Output : 10mW CW
- Package Type
: TO-18 (5.